0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 FMMT723 features 625mw power dissipation i c cont 2.5a i c up to 10a peak pulse current excellent hfe characteristics up to 10a (pulsed) extremely low saturation voltage e.g. 10mv typ. exhibits extremely low equivalent on-resistance; r ce(sat) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current i c -1 a peak collector current i cm -2.5 a base current i b -500 ma power dissipation p tot 625 mw operating and storage temperature range t j, t stg -55to+150 smd type ic smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type s m d ty p e r a n s i s t o r product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors marking marking 723 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -100 -200 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -100 -160 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 -8.8 v collector cutoff current i cbo v cb =-80v -100 na emitter cut-off current i ebo v eb =-4v -100 na collector emitter cut-off current i ces v ces =-80v -100 na collector-emitter saturation voltage * v ce( sat) i c =-0.1a, i b =-10ma i c =-0.5a, i b =-50ma i c =-1a, i b =-150ma -50 -125 -210 -80 -200 -330 mv base-emitter saturation voltage * v be( sat) i c =-1a,i b =-150ma -0.89 -1.0 v base-emitter voltage * v be(on) i c =-1a,v ce =-10v -0.71 -1.0 v i c =-10ma, v ce =-10v 300 475 i c =-0.1a, v ce =-10v 300 450 i c =-0.5a, v ce =-10v 250 375 i c =-1a, v ce =-10v 250 i c =-1.5a, v ce =-10v 30 current-gain-bandwidth product f t i c =-50ma,v ce =-10v,f=100mhz 150 200 mhz output capacitance c obo v cb =-10v,f=1mhz 13 20 pf ton i c =-0.5a, v cc =-50v 50 ns toff i b1 =i b2 =-50ma 760 ns * pulse test: tp = 300 s; d 0.02. switching times h fe static forward current transfer ratio * FMMT723 smd type ic smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type s m d ty p e r a n s i s t o r product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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